Ampleon BLF6G27S-45K,118

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

10

Maximum Continuous Drain Current (A)

20

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Reverse Transfer Capacitance @ Vds (pF)

1.1@28V

Typical Forward Transconductance (S)

4.3

Output Power (W)

7(Typ)

Typical Power Gain (dB)

18

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

2500

Typical Drain Efficiency (%)

24

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

CDFM

Military

无

Mounting

表面贴装

Package Height

4.62(Max)

Package Length

10.29(Max)

Package Width

10.29(Max)

PCB changed

3

包装

卷带

类型

MOSFET

引脚数量

3

配置

Single

信道型

N

操作方式

1-Carrier N-CDMA