参数名
参数值
参数名
参数值
包装/外壳
SOT-539A
供应商器件包装
SOT539A
ECCN (US)
EAR99
HTS
8541.29.00.75
Channel Mode
Enhancement
Number of Elements per Chip
2
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
108
Maximum Gate Source Voltage (V)
11
Maximum Drain Source Resistance (mOhm)
90(Typ)@6.25V
Typical Input Capacitance @ Vds (pF)
368@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
0.86@50V
Typical Output Capacitance @ Vds (pF)
69@50V
Output Power (W)
135(Min)
Typical Power Gain (dB)
22.5
Maximum Frequency (MHz)
860
Minimum Frequency (MHz)
400
Typical Drain Efficiency (%)
35
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
225
Supplier Package
SOT-539A
Military
无
Mounting
Screw
Package Height
4.7(Max)
Package Length
41.28(Max)
Package Width
10.29(Max)
PCB changed
5
Package
Tray
Base Product Number
BLF989
厂商
Ampleon USA Inc.
Product Status
活跃
Voltage Rated
108 V
系列
-
零件状态
活跃
类型
MOSFET
额定电流
2.8µA
频率
470MHz ~ 700MHz
引脚数量
5
配置
双共源
测试电流
600 mA
晶体管类型
LDMOS (Dual), Common Source
增益
20dB
信道型
N
功率 - 输出
1000W
噪声图
-
电压-测试
50 V
操作方式
Class AB|DVB-T OFDM
RoHS状态
符合RoHS标准