Ampleon BLL8H0514L-130

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.25

Maximum VSWR

5

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Forward Transconductance (S)

1.578(Max)

Output Power (W)

130(Typ)

Typical Power Gain (dB)

17

Maximum Frequency (MHz)

1400

Minimum Frequency (MHz)

500

Typical Fall Time (ns)

6

Typical Rise Time (ns)

20

Typical Drain Efficiency (%)

50

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Automotive

Unknown

Supplier Package

CDFM

Military

无

Mounting

Screw

Package Height

4.65(Max)

Package Length

20.45(Max)

Package Width

9.91(Max)

PCB changed

3

Package Description

,

Manufacturer Part Number

BLL8H0514L-130

Manufacturer

恩智浦半导体

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.74

包装

Bulk

零件状态

活跃

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N

操作方式

脉冲射频

RoHS状态

符合RoHS标准