Ampleon BLP10H603

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

104

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.25

Maximum VSWR

35

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

9000(Typ)@6V

Typical Input Capacitance @ Vds (pF)

3.4@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.03@50V

Typical Output Capacitance @ Vds (pF)

1.12@50V

Output Power (W)

2.5

Typical Power Gain (dB)

22.8

Maximum Frequency (MHz)

1400

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

62

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Supplier Package

HVSON EP

Military

无

Mounting

表面贴装

Package Height

0.82

Package Length

6

Package Width

5

PCB changed

12

Package Description

,

Manufacturer Part Number

BLP10H603

Manufacturer

恩智浦半导体

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.69

零件状态

活跃

Reach合规守则

unknown

引脚数量

12

配置

Single

信道型

N

操作方式

CW

RoHS状态

符合RoHS标准