Ampleon BLP15M7160P

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

200(Typ)@6.05V

Typical Input Capacitance @ Vds (pF)

81@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.6@28V

Typical Output Capacitance @ Vds (pF)

50@28V

Typical Forward Transconductance (S)

6

Output Power (W)

160(Typ)

Typical Power Gain (dB)

19.4

Maximum Frequency (MHz)

1500

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

59.7

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

HSOP-F

Military

无

Mounting

表面贴装

Package Height

3.6

Package Length

20.57

Package Width

9.96

PCB changed

4

零件状态

活跃

引脚数量

4

配置

双共源

信道型

N

操作方式

Class-B|Pulse

RoHS状态

符合RoHS标准