Ampleon BLP8G27-5

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

2000(Typ)@3.75V

Typical Forward Transconductance (S)

0.08

Output Power (W)

5

Typical Power Gain (dB)

18

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

700

Typical Drain Efficiency (%)

17

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

HVSON EP

Military

无

Mounting

表面贴装

Package Height

0.82

Package Length

6

Package Width

4

PCB changed

16

零件状态

活跃

引脚数量

16

配置

单排水双闸门

信道型

N

操作方式

脉冲CW

RoHS状态

符合RoHS标准