A Power microelectronics AP120N04P
- 收藏
- 对比
AP120N04P
1604-AP120N04P
晶体管 - FET,MOSFET - 单个
--
大陆
立即发货

40V 120A 3mΩ@10V,30A 180W 2.8V@250uA 1 N-Channel TO-220-3L MOSFETs ROHS
1最小包装量--
AP120N04P详情
A Power microelectronics AP120N04P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
40V
Drain Source On Resistance (RDS(on)@Vgs,Id)
3mΩ@10V,30A
Power Dissipation (Pd)
180W
Gate Threshold Voltage (Vgs(th)@Id)
2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)
317pF@20V
Input Capacitance (Ciss@Vds)
4.9nF@20V
Total Gate Charge (Qg@Vgs)
80nC@10V
Package
Tube-packed
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
120A
AP120N04P拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics







哦! 它是空的。