A Power microelectronics AP120N08P
- 收藏
- 对比
AP120N08P
1604-AP120N08P
晶体管 - FET,MOSFET - 单个
--
大陆
立即发货

85V 120A 4.5mΩ@10V,50A 220W 3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
1最小包装量--
AP120N08P详情
A Power microelectronics AP120N08P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
85V
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.5mΩ@10V,50A
Power Dissipation (Pd)
220W
Gate Threshold Voltage (Vgs(th)@Id)
3V@250uA
Reverse Transfer Capacitance (Crss@Vds)
35pF@40V
Input Capacitance (Ciss@Vds)
4.032nF@40V
Total Gate Charge (Qg@Vgs)
65.7nC@10V
Package
Tube-packed
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
120A
AP120N08P拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。