A Power microelectronics AP180N08P
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AP180N08P
1604-AP180N08P
晶体管 - FET,MOSFET - 单个
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85V 180A 2.9mΩ@10V,50A 284W 3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
1最小包装量--
AP180N08P详情
A Power microelectronics AP180N08P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
85V
Drain Source On Resistance (RDS(on)@Vgs,Id)
2.9mΩ@10V,50A
Power Dissipation (Pd)
284W
Gate Threshold Voltage (Vgs(th)@Id)
3V@250uA
Reverse Transfer Capacitance (Crss@Vds)
48nF@40V
Input Capacitance (Ciss@Vds)
6.813uF@40V
Total Gate Charge (Qg@Vgs)
91nC@10V
Package
Tube-packed
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
180A
AP180N08P拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。