A Power microelectronics AP30N06D
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AP30N06D
1604-AP30N06D
晶体管 - FET,MOSFET - 单个
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60V 30A 25mΩ@10V,15A 34.7W 2.5V@250uA 1 N-Channel TO-252-3L MOSFETs ROHS
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AP30N06D详情
A Power microelectronics AP30N06D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Drain Source On Resistance (RDS(on)@Vgs,Id)
25mΩ@10V,15A
Power Dissipation (Pd)
34.7W
Gate Threshold Voltage (Vgs(th)@Id)
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
64pF@15V
Input Capacitance (Ciss@Vds)
1.378nF@15V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
30A
AP30N06D拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。