A Power microelectronics AP40N02D
- 收藏
- 对比
AP40N02D
1604-AP40N02D
晶体管 - FET,MOSFET - 单个
--
大陆
立即发货

20V 40A 40W 6.2mΩ@4.5V,25A 700mV@250uA 1 N-Channel TO-252-3 MOSFETs ROHS
1最小包装量--
AP40N02D详情
A Power microelectronics AP40N02D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Power Dissipation (Pd)
40W
Drain Source On Resistance (RDS(on)@Vgs,Id)
6.2mΩ@4.5V,25A
Gate Threshold Voltage (Vgs(th)@Id)
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
105pF@10V
Input Capacitance (Ciss@Vds)
1.1nF@10V
Total Gate Charge (Qg@Vgs)
15nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
40A
AP40N02D拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。