A Power microelectronics AP50N06BD
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AP50N06BD
1604-AP50N06BD
晶体管 - FET,MOSFET - 单个
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60V 50A 45W 16mΩ@10V,20A 1.6V@250uA 1 N-Channel TO-252 MOSFETs ROHS
1最小包装量--
AP50N06BD详情
A Power microelectronics AP50N06BD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Power Dissipation (Pd)
45W
Drain Source On Resistance (RDS(on)@Vgs,Id)
16mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)
85pF@15V
Input Capacitance (Ciss@Vds)
1.68nF@15V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
50A
AP50N06BD拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。