A Power microelectronics AP50P10D
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AP50P10D
1604-AP50P10D
晶体管 - FET,MOSFET - 单个
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100V 50A 104W 46mΩ@4.5V,8A 1.8V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
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AP50P10D详情
A Power microelectronics AP50P10D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
100V
Power Dissipation (Pd)
104W
Drain Source On Resistance (RDS(on)@Vgs,Id)
46mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)@Id)
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)
125pF@25V
Input Capacitance (Ciss@Vds)
6.516nF@25V
Total Gate Charge (Qg@Vgs)
92nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 Piece P-Channel
Continuous Drain Current (Id)
50A
AP50P10D拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。