Central 2N3505 PBFREE

包装/外壳

TO-18-3

Emitter- Base Voltage VEBO

5 V

Transistor Polarity

PNP

DC Collector/Base Gain hfe Min

100 at 150 mA, 10 V

Collector-Emitter Saturation Voltage

400 mV

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

200 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

DC Current Gain hFE Max

300 at 150 mA, 10 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

60 V

系列

2N35

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

60 V

连续集电极电流

150 mA

产品类别

Bipolar Transistors - BJT