参数名
参数值
参数名
参数值
包装/外壳
TO-92
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
360 mW
Transistor Polarity
PNP
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
30
Collector-Emitter Saturation Voltage
250 mV
Unit Weight
0.016000 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
通孔
Gain Bandwidth Product fT
100 MHz
Manufacturer
Central Semiconductor
Brand
Central Semiconductor
Maximum DC Collector Current
200 mA
DC Current Gain hFE Max
150
RoHS
Details
Collector- Emitter Voltage VCEO Max
30 V
包装
Bulk
子类别
Transistors
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
50 V
连续集电极电流
200 mA
产品类别
Bipolar Transistors - BJT