Central 2N4239PBFREE

包装/外壳

TO-39-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

6 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

30

Collector-Emitter Saturation Voltage

600 mV

Unit Weight

0.035486 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Gain Bandwidth Product fT

2 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

3 A

DC Current Gain hFE Max

250

RoHS

Details

Collector- Emitter Voltage VCEO Max

80 V

Package Description

CYLINDRICAL, O-MBCY-W3

Package Style

CYLINDRICAL

Package Body Material

METAL

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

有

Transition Frequency-Nom (fT)

2 MHz

Manufacturer Part Number

2N4239PBFREE

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.71

系列

2N42

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

技术

Si

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-MBCY-W3

配置

Single

晶体管应用

AMPLIFIER

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-39

集电极基极电压(VCBO)

100 V

最大耗散功率(Abs)

6 W

集电极电流-最大值(IC)

3 A

最小直流增益（hFE）

15

连续集电极电流

3 A

集电极-发射器电压-最大值

80 V

VCEsat-最大值

0.6 V

集电极-基极电容-最大值

100 pF

产品类别

Bipolar Transistors - BJT