Central CXT5551HCTRPBFREE

包装/外壳

SOT-89-3

表面安装

YES

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

1.2 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

30 at 50 mA, 5 V

Collector-Emitter Saturation Voltage

200 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

DC Current Gain hFE Max

250 at 10 mA, 5 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

160 V

Package Description

,

Operating Temperature-Max

150 °C

Rohs Code

有

Transition Frequency-Nom (fT)

100 MHz

Manufacturer Part Number

CXT5551HCTRPBFREE

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.61

包装

Reel

子类别

Transistors

技术

Si

配置

Single

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

180 V

最大耗散功率(Abs)

1.2 W

集电极电流-最大值(IC)

1 A

最小直流增益（hFE）

80

连续集电极电流

1 A

产品类别

Bipolar Transistors - BJT

达到SVHC

compliant