Central CXT5551HCTRPBFREE

包装/外壳

SOT-89-3

表面安装

YES

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

1.2 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

30 at 50 mA, 5 V

Collector-Emitter Saturation Voltage

200 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

DC Current Gain hFE Max

250 at 10 mA, 5 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

160 V

Package Description

,

Operating Temperature-Max

150 °C

Rohs Code

有

Transition Frequency-Nom (fT)

100 MHz

Manufacturer Part Number

CXT5551HCTRPBFREE

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.61

包装

Reel

子类别

Transistors

技术

Si

Reach合规守则

compliant

配置

Single

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

180 V

最大耗散功率(Abs)

1.2 W

集电极电流-最大值(IC)

1 A

最小直流增益（hFE）

80

连续集电极电流

1 A

产品类别

Bipolar Transistors - BJT