参数名
参数值
参数名
参数值
包装/外壳
TO-92-3
Schedule B
8541210080/8541210080/8541210080/8541210080/8541210080
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
1.5 W
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
25 at 1 mA, 10 V
Collector-Emitter Saturation Voltage
500 mV
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
通孔
Gain Bandwidth Product fT
50 MHz
Manufacturer
Central Semiconductor
Brand
Central Semiconductor
RoHS
Details
Collector- Emitter Voltage VCEO Max
300 V
包装
Reel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
300 V
连续集电极电流
500 mA
产品类别
Bipolar Transistors - BJT