Central Semiconductor 2N3741APBFREE

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

Manufacturer Part Number

2N3741APBFREE

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

FLANGE MOUNT, O-MBFM-P2

Risk Rank

5.6

Number of Elements

1

Operating Temperature-Max

200 °C

Operating Temperature-Min

-65 °C

Package Body Material

METAL

Package Shape

ROUND

Package Style

FLANGE MOUNT

Reflow Temperature-Max (s)

未说明

Transition Frequency-Nom (fT)

4 MHz

Schedule B

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Emitter-Base Voltage

7(V)

Operating Temperature Classification

Military

Package Type

TO-66

Transistor Polarity

PNP

Collector-Base Voltage

80(V)

Category

双极电源

Operating Temp Range

-65C to 200C

Collector Current (DC)

4(A)

Rad Hardened

无

Mounting

通孔

Unit Weight

0.206000 oz

Factory Pack QuantityFactory Pack Quantity

30

Brand

Central Semiconductor

RoHS

Details

包装

Sleeve

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

频率

4(MHz)

引脚数量

2 +Tab

JESD-30代码

O-MBFM-P2

配置

SINGLE

功率耗散

25(W)

箱体转运

COLLECTOR

输出功率

Not Required(W)

晶体管应用

SWITCHING

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-66

最大耗散功率(Abs)

25 W

集电极电流-最大值(IC)

4 A

最小直流增益（hFE）

30

集电极-发射器电压-最大值

80 V

VCEsat-最大值

0.6 V

集电极-基极电容-最大值

100 pF

产品类别

Bipolar Transistors - BJT