Central Semiconductor 2N4856 PBFREE

包装/外壳

TO-18-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vgs - Gate-Source Breakdown Voltage

40 V

Gate-Source Cutoff Voltage

10 V

Drain-Source Current at Vgs=0

50 mA

Rds On - Drain-Source Resistance

25 Ohms

Pd - Power Dissipation

360 mW

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

Maximum Drain Gate Voltage

40 V

Factory Pack QuantityFactory Pack Quantity

2000

系列

2N4856

包装

Bulk

配置

Single