Central Semiconductor CMRDM7590 TR PBFREE
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CMRDM7590 TR PBFREE
420-CMRDM7590 TR PBFREE
晶体管 - FET,MOSFET - 单个
SOT-963
大陆
立即发货

MOSFET 20V P-Ch Enh FET 8.0Vgs 125mW 0.5mm
1最小包装量--
CMRDM7590 TR PBFREE详情
Central Semiconductor CMRDM7590 TR PBFREE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-963
表面安装
YES
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
140 mA
Rds On - Drain-Source Resistance
5 Ohms
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage
-
Qg - Gate Charge
500 pC
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
125 mW
Channel Mode
Enhancement
Tradename
ATTOmini
Factory Pack QuantityFactory Pack Quantity
8000
Unit Weight
0.009524 oz
Package Description
,
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
CMRDM7590TRPBFREE
Part Life Cycle Code
活跃
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
Risk Rank
5.61
系列
CMxxDM
包装
MouseReel
Reach合规守则
compliant
通道数量
2 Channel
操作模式
增强型MOSFET
极性/通道类型
P-CHANNEL
最大漏极电流 (Abs) (ID)
0.14 A
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.125 W
CMRDM7590 TR PBFREE拓展信息
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