Central Semiconductor CTLDM7120-M832DS TR PBFREE

包装/外壳

TLM832DS

Vgs th - Gate-Source Threshold Voltage

1 V

Qg - Gate Charge

2.4 nC

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

1.65 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

140 ns

Typical Turn-On Delay Time

25 ns

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Rds On - Drain-Source Resistance

75 mOhms

Id - Continuous Drain Current

1 A

Vds - Drain-Source Breakdown Voltage

20 V

Transistor Polarity

N-Channel

Mounting Styles

SMD/SMT

RoHS

Details

包装

切割胶带

配置

Dual

通道数量

2 Channel

晶体管类型

2 N-Channel