Comchip Technology ACMSN2312T-HF
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ACMSN2312T-HF
513-ACMSN2312T-HF
晶体管 - FET,MOSFET - 单个
TO-236-3, SC-59, SOT-23-3
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MOSFET N-CH 20V 4.9A SOT23
1最小包装量--
ACMSN2312T-HF详情
Comchip Technology ACMSN2312T-HF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SOT-23-3
厂商
芯片技术
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
4.9A (Ta)
Power Dissipation (Max)
750mW (Ta)
Base Product Number
ACMSN2312
Typical Turn-On Delay Time
15 ns
Vgs th - Gate-Source Threshold Voltage
1.2 V
Qualification
AEC-Q101
Pd - Power Dissipation
750 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
芯片技术
Brand
芯片技术
Qg - Gate Charge
11.2 nC
Rds On - Drain-Source Resistance
31 mOhms
RoHS
过渡中
Typical Turn-Off Delay Time
48 ns
Id - Continuous Drain Current
4.9 A
Vds - Drain-Source Breakdown Voltage
8 V, 8 V
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
31mOhm @ 5A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.2V @ 250μA
输入电容(Ciss)(Max)@Vds
500 pF @ 8 V
门极电荷(Qg)(最大)@Vgs
14 nC @ 4.5 V
上升时间
40 ns
漏源电压 (Vdss)
20 V
Vgs(最大值)
±8V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
ACMSN2312T-HF拓展信息
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