Comchip Technology BC846AW-G
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BC846AW-G
513-BC846AW-G
晶体管 - 双极性晶体管(BJT)- 单个
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Bipolar Transistors - BJT 80V, 100mA
1最小包装量--
BC846AW-G详情
Comchip Technology BC846AW-G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
65 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
600 mV
Maximum DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Factory Pack QuantityFactory Pack Quantity
3000
Operating Temperature-Max
150
Transition Frequency-Nom (fT)
100
Package Description
SMALL OUTLINE, R-PDSO-G3
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
30
Rohs Code
有
Manufacturer Part Number
BC846AW-G
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
Risk Rank
1.81
系列
BC846
包装
MouseReel
JESD-609代码
e3
端子表面处理
Tin (Sn)
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
JESD-30代码
R-PDSO-G3
配置
Single
极性/通道类型
NPN
集电极基极电压(VCBO)
80 V
最大耗散功率(Abs)
.15
集电极电流-最大值(IC)
.1
最小直流增益(hFE)
110
集电极-发射器电压-最大值
65 V
BC846AW-G拓展信息
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