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¥3.158689
10
¥2.979898
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¥2.811225
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¥2.652097
1000
¥2.501981
Comchip Technology BSS123T-HF
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BSS123T-HF
513-BSS123T-HF
晶体管 - FET,MOSFET - 单个
SOT-23-3
大陆
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MOSFET 100V 0.19A SOT-23
--最小包装量--
¥
总价: ¥
BSS123T-HF详情
Comchip Technology BSS123T-HF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
安装类型
表面贴装
供应商器件包装
SOT-23-3
Unit Weight
0.000282 oz
Typical Turn-On Delay Time
4.2 ns
Typical Turn-Off Delay Time
10.2 ns
Factory Pack QuantityFactory Pack Quantity
3000
Channel Mode
Enhancement
Pd - Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Qg - Gate Charge
2.8 nC
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Rds On - Drain-Source Resistance
5.6 Ohms
Id - Continuous Drain Current
190 mA
Vds - Drain-Source Breakdown Voltage
100 V
Transistor Polarity
N-Channel
Mounting Styles
SMD/SMT
RoHS
Details
Package
Tape & Reel (TR)
Base Product Number
BSS123
Current - Continuous Drain (Id) @ 25℃
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
芯片技术
Power Dissipation (Max)
300mW (Ta)
Product Status
活跃
包装
切割胶带
操作温度
-55°C ~ 150°C (TJ)
系列
-
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
5.6Ohm @ 100mA, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250µA
输入电容(Ciss)(Max)@Vds
39 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
2.8 nC @ 10 V
上升时间
15.2 ns
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
晶体管类型
1 N-Channel
场效应管特性
-
BSS123T-HF拓展信息
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