Comchip Technology CEH2315-HF
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CEH2315-HF
513-CEH2315-HF
晶体管 - FET,MOSFET - 单个
SOT-23-6 Thin, TSOT-23-6
大陆
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MOSFET P-CH 30VDS 20VGS 5A TSOP-
1最小包装量--
CEH2315-HF详情
Comchip Technology CEH2315-HF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-23-6 Thin, TSOT-23-6
供应商器件包装
6-TSOP
厂商
芯片技术
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
2W
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
10 ns
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
2 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
芯片技术
Brand
芯片技术
Qg - Gate Charge
11.2 nC
Rds On - Drain-Source Resistance
50 mOhms
RoHS
Details
Typical Turn-Off Delay Time
36 ns
Id - Continuous Drain Current
5 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
50mOhm @ 3.8A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250μA
输入电容(Ciss)(Max)@Vds
650 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
11.2 nC @ 10 V
上升时间
4 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
CEH2315-HF拓展信息
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