Comchip Technology CTBN0812V-G
- 收藏
- 对比
CTBN0812V-G
513-CTBN0812V-G
集成电路(IC)
--
大陆
立即发货

Trans Voltage Suppressor Diode,300W,12VV(RWM),Unidirectional, 8 Element, Silicon
1最小包装量--
CTBN0812V-G详情
Comchip Technology CTBN0812V-G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
二极管元件材料
SILICON
终端数量
8
Manufacturer Part Number
CTBN0812V-G
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
Package Description
ROHS COMPLIANT, SOIC-8
Risk Rank
5.78
Breakdown Voltage-Nom
13.3 V
Number of Elements
8
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Reflow Temperature-Max (s)
30
ECCN 代码
EAR99
HTS代码
8541.10.00.50
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-G8
极性
UNIDIRECTIONAL
配置
COMMON ANODE, 8 ELEMENTS
二极管类型
跨压抑制二极管
Rep Pk反向电压-最大值
12 V
最大非代表峰值转速功率Dis
300 W
击穿电压-最小值
13.3 V
最大箝位电压
20 V
CTBN0812V-G拓展信息
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology







哦! 它是空的。