Comchip Technology MBR20H200FCT-G
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MBR20H200FCT-G
513-MBR20H200FCT-G
集成电路(IC)
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大陆
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Rectifier Diode, Schottky, 10A, 200V V(RRM)
1最小包装量--
MBR20H200FCT-G详情
Comchip Technology MBR20H200FCT-G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
二极管元件材料
SILICON
终端数量
3
Manufacturer Part Number
MBR20H200FCT-G
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
Package Description
R-PSFM-T3
Risk Rank
5.76
Forward Voltage-Max (VF)
0.97 V
Number of Elements
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Reflow Temperature-Max (s)
未说明
ECCN 代码
EAR99
应用
EFFICIENCY
附加功能
低功率损耗
HTS代码
8541.10.00.80
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
JESD-30代码
R-PSFM-T3
配置
COMMON CATHODE, 2 ELEMENTS
二极管类型
接收电极
箱体转运
ISOLATED
输出电流-最大值
10 A
相位的数量
1
Rep Pk反向电压-最大值
200 V
JEDEC-95代码
TO-220AB
最大非代表Pk前进电流
150 A
反向电流-最大值
5 µA
MBR20H200FCT-G拓展信息
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