Cree C3M0015065D

包装/外壳

TO-247-3

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

30

Fall Time

25 ns

Forward Transconductance - Min

42 S

Id - Continuous Drain Current

81 A

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 40 C

Mounting Styles

通孔

Pd - Power Dissipation

416 W

Qg - Gate Charge

188 nC

Rds On - Drain-Source Resistance

15 mOhms

RoHS

Details

Transistor Polarity

N-Channel

Typical Turn-Off Delay Time

58 ns

Typical Turn-On Delay Time

22 ns

Vds - Drain-Source Breakdown Voltage

650 V

Vgs - Gate-Source Voltage

- 4 V, + 15 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

125 ns

晶体管类型

1 N-Channel

产品

MOSFET

高度

21.1 mm

长度

16.13 mm

宽度

5.21 mm