Cree C3M0025065J1

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

80 A

Rds On - Drain-Source Resistance

34 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 19 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

109 nC

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

271 W

Channel Mode

Enhancement

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

50

包装

Tube

通道数量

1 Channel

产品

MOSFET