Cree C3M0060065J

包装/外壳

TO-263-7

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

50

Fall Time

6 ns

Forward Transconductance - Min

10 S

Id - Continuous Drain Current

36 A

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 40 C

Moisture Sensitive

有

Mounting Styles

SMD/SMT

Pd - Power Dissipation

136 W

Qg - Gate Charge

46 nC

Rds On - Drain-Source Resistance

60 mOhms

RoHS

Details

Transistor Polarity

N-Channel

Typical Turn-Off Delay Time

17 ns

Typical Turn-On Delay Time

9 ns

Vds - Drain-Source Breakdown Voltage

650 V

Vgs - Gate-Source Voltage

- 4 V, + 15 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

8 ns

晶体管类型

1 N-Channel

产品

MOSFET

高度

9.13 mm

长度

10.23 mm

宽度

4.57 mm