Cree C3M0120065J

包装/外壳

TO-263-7

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

21 A

Rds On - Drain-Source Resistance

120 mOhms

Vgs - Gate-Source Voltage

- 4 V, + 15 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

26 nC

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

86 W

Channel Mode

Enhancement

Fall Time

9 ns

Forward Transconductance - Min

5 S

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

50

Typical Turn-Off Delay Time

18 ns

Typical Turn-On Delay Time

8 ns

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

9 ns

晶体管类型

1 N-Channel

产品

MOSFET

高度

9.13 mm

长度

10.23 mm

宽度

4.57 mm