Cree C3M0120065K

包装/外壳

TO-247-4

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

22 A

Rds On - Drain-Source Resistance

120 mOhms

Vgs - Gate-Source Voltage

- 4 V, + 15 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

28 nC

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

98 W

Channel Mode

Enhancement

Fall Time

11 ns

Forward Transconductance - Min

5 S

Factory Pack QuantityFactory Pack Quantity

30

Typical Turn-Off Delay Time

19 ns

Typical Turn-On Delay Time

8 ns

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

11 ns

晶体管类型

1 N-Channel

产品

MOSFET

高度

23.6 mm

长度

16.13 mm

宽度

5.21 mm