Cree CMPA2735030S

包装/外壳

QFN-32

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

150 V

Vgs - Gate-Source Breakdown Voltage

- 10 V, 2 V

Id - Continuous Drain Current

4.6 A

Maximum Drain Gate Voltage

-

Minimum Operating Temperature

-

Maximum Operating Temperature

+ 225 C

Pd - Power Dissipation

32 W

Mounting Styles

SMD/SMT

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

50

Vgs th - Gate-Source Threshold Voltage

- 3 V

包装

切割胶带

工作频率

2.7 GHz to 3.5 GHz

输出功率

40.6 W

晶体管类型

HEMT

增益

28.1 dB