CGHV38375F详情
Cree CGHV38375F重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
440226
Shipping Restrictions
This product may require additional documentation to export from the United States.
RoHS
Details
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
125 V
Vgs - Gate-Source Breakdown Voltage
- 10 V, 2 V
Id - Continuous Drain Current
24 A
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 125 C
Mounting Styles
法兰安装
Factory Pack QuantityFactory Pack Quantity
1
工作频率
2.75 GHz to 3.75 GHz
输出功率
400 W
晶体管类型
HEMT
增益
11 dB
CGHV38375F拓展信息








哦! 它是空的。