Cree E3M0075120K

包装/外壳

TO-247-4

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

32 A

Rds On - Drain-Source Resistance

97.5 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 19 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

55 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

145 W

Channel Mode

Enhancement

Qualification

AEC-Q101

Fall Time

11 ns

Forward Transconductance - Min

11 S

Factory Pack QuantityFactory Pack Quantity

30

Typical Turn-Off Delay Time

29 ns

Typical Turn-On Delay Time

8 ns

系列

E-Series

配置

Single

通道数量

1 Channel

上升时间

22 ns

晶体管类型

汽车功率MOSFET