Cree PTFB201402FC-V2-R0

包装/外壳

H-37248-4

Factory Pack QuantityFactory Pack Quantity

50

Maximum Operating Temperature

+ 225 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

300 mOhms

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

65 V

Vgs - Gate-Source Voltage

10 V

包装

Reel

类型

射频功率MOSFET

工作频率

2010 MHz to 2025 MHz

通道数量

1 Channel

输出功率

140 W

晶体管类型

LDMOS FET

增益

16 dB