CTS LP29BF35IDT

包装/外壳

TO-251-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

2.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5040

Mounting Styles

通孔

Forward Transconductance - Min

0.75 S

Channel Mode

Enhancement

Part # Aliases

FQU1N60CTU_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

6.2 nC

Rds On - Drain-Source Resistance

11.5 Ohms

RoHS

Details

Typical Turn-Off Delay Time

13 ns

Id - Continuous Drain Current

1 A

系列

FQU1N60C

包装

Tube

容差

30 PPM

类型

MOSFET

子类别

MOSFETs

技术

Si

频率

29.4912 MHz

频率稳定性

50 PPM

终端样式

SMD/SMT

配置

Single

通道数量

1 Channel

负载电容

18 pF

上升时间

21 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

等效串联电阻

30 Ohms

产品类别

MOSFET

宽度

2.5 mm

高度

6.3 mm

长度

6.8 mm