参数名
参数值
参数名
参数值
包装/外壳
TO-264-3
供应商器件包装
Axial
Vds - Drain-Source Breakdown Voltage
100 V
Typical Turn-On Delay Time
16 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
520 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
30 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Rds On - Drain-Source Resistance
11 mOhms
RoHS
Details
Typical Turn-Off Delay Time
46 ns
Id - Continuous Drain Current
100 A
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
包装
Tube
操作温度
-55°C ~ 175°C
系列
CMF
尺寸/尺寸
0.145 Dia x 0.344 L (3.68mm x 8.74mm)
容差
±0.1%
湿度敏感性等级(MSL)
1 (Unlimited)
终止次数
2
温度系数
±50ppm/°C
类型
功率 MOS V
电阻
500 kOhms
组成
Metal Film
功率(瓦特)
1W
子类别
Discrete Semiconductor Modules
技术
Si
失败率
-
配置
Single
上升时间
33 ns
产品类别
Discrete Semiconductor Modules
产品
功率MOSFET模块
特征
Flame Retardant Coating, Moisture Resistant, Safety
产品类别
Discrete Semiconductor Modules
座位高度(最大)
-