Dale RNC55J8062FSRSL

包装/外壳

TO-3PN-3

供应商器件包装

Axial

Vds - Drain-Source Breakdown Voltage

900 V

Typical Turn-On Delay Time

35 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

198 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.162260 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

450

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FQA6N90C_F109

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

40 nC

Tradename

QFET

Rds On - Drain-Source Resistance

2.3 Ohms

RoHS

Details

Typical Turn-Off Delay Time

55 ns

Id - Continuous Drain Current

6 A

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other Names

RNC55J8062FSRSL-MIL

系列

FQA6N90C_F109

包装

Tube

操作温度

-65°C ~ 175°C

尺寸/尺寸

0.094 Dia x 0.250 L (2.39mm x 6.35mm)

容差

±1%

湿度敏感性等级(MSL)

1 (Unlimited)

终止次数

2

温度系数

±25ppm/°C

电阻

80.6 kOhms

组成

Metal Film

功率(瓦特)

0.125W, 1/8W

子类别

MOSFETs

技术

Si

失败率

S (0.001%)

配置

Single

通道数量

1 Channel

上升时间

90 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

特征

Military, Moisture Resistant, Weldable

产品类别

MOSFET

宽度

5 mm

高度

20.1 mm

长度

16.2 mm

座位高度(最大)

-