Diodes Incorporated AC847BQ-7
- 收藏
- 对比
AC847BQ-7
671-AC847BQ-7
晶体管 - 双极性晶体管(BJT)- 单个
TO-236-3, SC-59, SOT-23-3
大陆
立即发货

GENERAL PURPOSE TRANSISTOR SOT23
1最小包装量--
AC847BQ-7详情
Diodes Incorporated AC847BQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SOT-23-3
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
100 mA
Factory Pack QuantityFactory Pack Quantity
3000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
350 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
330
Collector-Emitter Saturation Voltage
200 mV
Minimum Operating Temperature
- 65 C
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
300 MHz
Maximum DC Collector Current
100 mA
Collector- Emitter Voltage VCEO Max
45 V
系列
Automotive, AEC-Q101
操作温度
-65°C ~ 150°C (TJ)
子类别
Transistors
技术
Si
配置
Single
功率 - 最大
310 mW
产品类别
BJTs - Bipolar Transistors
晶体管类型
NPN
最小直流增益(hFE)@ Ic, Vce
200 @ 2mA, 5V
最大集极截止电流
15nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
600mV @ 5mA, 100mA
电压 - 集射极击穿(最大值)
45 V
频率转换
300MHz
集电极基极电压(VCBO)
50 V
产品类别
Bipolar Transistors - BJT
AC847BQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







哦! 它是空的。