Diodes Incorporated BC859BW
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BC859BW
671-BC859BW
晶体管 - 双极性晶体管(BJT)- 单个
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BC859BW datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at utmel
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BC859BW详情
Diodes Incorporated BC859BW重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.75
Automotive
无
PPAP
无
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
30
Maximum Collector-Emitter Voltage (V)
30
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
0.85(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)
0.65@5mA@100mA|[email protected]@10mA
Maximum DC Collector Current (A)
0.1
Maximum Collector Cut-Off Current (nA)
15
Minimum DC Current Gain
220@2mA@5V
Maximum Power Dissipation (mW)
200
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Commercial
Mounting
表面贴装
Package Width
1.25
Package Length
2
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-323
Lead Shape
Gull-wing
包装
卷带
零件状态
活跃
类型
PNP
引脚数量
3
配置
Single
BC859BW拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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