Diodes Incorporated DMN21D2UFB-7

工厂交货时间

15 Weeks

表面安装

YES

包装/外壳

X1-DFN1006-3

安装类型

表面贴装

供应商器件包装

X1-DFN1006-3

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

DMN21D2UFB-7

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Package Description

CHIP CARRIER, R-PBCC-N3

Risk Rank

5.73

Drain Current-Max (ID)

0.76 A

Moisture Sensitivity Levels

1

Number of Elements

1

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

CHIP CARRIER

Continuous Drain Current Id

760

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

3.5 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

380 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.002822 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Brand

Diodes Incorporated

Qg - Gate Charge

930 pC

Rds On - Drain-Source Resistance

990 mOhms

Typical Turn-Off Delay Time

19.6 ns

Id - Continuous Drain Current

760 mA

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

760mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

厂商

Diodes Incorporated

Power Dissipation (Max)

380mW (Ta)

Product Status

活跃

操作温度

-55°C ~ 150°C (TJ)

系列

-

JESD-609代码

e4

端子表面处理

Nickel/Palladium/Gold (Ni/Pd/Au)

子类别

MOSFETs

技术

Si

端子位置

BOTTOM

终端形式

无铅

Reach合规守则

compliant

JESD-30代码

R-PBCC-N3

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

900

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

990mOhm @ 100mA, 4.5V

不同 Id 时 Vgs(th)（最大值）

1V @ 250µA

输入电容(Ciss)(Max)@Vds

27.6 pF @ 16 V

门极电荷(Qg)(最大)@Vgs

0.93 nC @ 10 V

上升时间

4.2 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

漏极-源极导通最大电阻

0.99 Ω

DS 击穿电压-最小值

20 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.9 W

场效应管特性

-

反馈上限-最大值 (Crss)

2.8 pF

产品类别

MOSFET