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价格梯度
内地含税价
1
¥1.697339
10
¥1.601265
100
¥1.510628
500
¥1.425122
1000
¥1.344455
Diodes Incorporated DSS3515MQ-7
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- 对比
DSS3515MQ-7
671-DSS3515MQ-7
晶体管 - 双极性晶体管(BJT)- 单个
3-UFDFN
大陆
立即发货

SS LOW SAT TRANSISTOR X1-DFN1006
--最小包装量--
¥
总价: ¥
DSS3515MQ-7详情
Diodes Incorporated DSS3515MQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
3-UFDFN
供应商器件包装
X1-DFN1006-3
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
500 mA
Transistor Polarity
NPN
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
200 at - 10 mA, - 2 V
Collector-Emitter Saturation Voltage
250 mV
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
340 MHz
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Maximum DC Collector Current
1 A
Collector- Emitter Voltage VCEO Max
15 V
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
子类别
Transistors
技术
Si
配置
Single
功率耗散
1.5
功率 - 最大
400 mW
产品类别
BJTs - Bipolar Transistors
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
200 @ 10mA, 2V
最大集极截止电流
100nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
250mV @ 50mA, 500mA
电压 - 集射极击穿(最大值)
15 V
转换频率
300
频率转换
340MHz
集电极基极电压(VCBO)
15 V
连续集电极电流
100
产品类别
Bipolar Transistors - BJT
DSS3515MQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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