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技术文档

价格梯度
内地含税价
1
¥6.044867
10
¥5.702708
100
¥5.379911
500
¥5.075386
1000
¥4.788097
Diodes Incorporated DSS60600MZ4Q-13
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- 对比
DSS60600MZ4Q-13
671-DSS60600MZ4Q-13
晶体管 - 双极性晶体管(BJT)- 单个
TO-261-4, TO-261AA
大陆
立即发货

PWR MID PERF TRANSISTOR SOT223 T
--最小包装量--
¥
总价: ¥
DSS60600MZ4Q-13详情
Diodes Incorporated DSS60600MZ4Q-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-261-4, TO-261AA
供应商器件包装
SOT-223-3
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
6 A
Transistor Polarity
NPN
Factory Pack QuantityFactory Pack Quantity
2500
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
Emitter- Base Voltage VEBO
7 V
Pd - Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
120
Collector-Emitter Saturation Voltage
360 mV
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
100 MHz
Maximum DC Collector Current
6 A
Collector- Emitter Voltage VCEO Max
60 V
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
Transistors
技术
Si
配置
Single
功率耗散
15
功率 - 最大
1.2 W
产品类别
BJTs - Bipolar Transistors
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
150 @ 500mA, 2V
最大集极截止电流
100nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
350mV @ 600mA, 6A
电压 - 集射极击穿(最大值)
60 V
转换频率
120
频率转换
100MHz
集电极基极电压(VCBO)
100 V
连续集电极电流
1.5
产品类别
Bipolar Transistors - BJT
DSS60600MZ4Q-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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