Diodes Incorporated DXTN10060DFJBQ-7

工厂交货时间

12 Weeks

安装类型

表面贴装

包装/外壳

3-UDFN Exposed Pad

供应商器件包装

U-DFN2020-3 (Type B)

厂商

Diodes Incorporated

Product Status

活跃

Current-Collector (Ic) (Max)

4 A

Transistor Polarity

NPN

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Emitter- Base Voltage VEBO

8 V

Pd - Power Dissipation

1.8 W

Maximum Operating Temperature

+ 175 C

DC Collector/Base Gain hfe Min

250 at 10 mA, 2 V

Collector-Emitter Saturation Voltage

240 mV

Unit Weight

0.000353 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

125 MHz

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Maximum DC Collector Current

4 A

DC Current Gain hFE Max

550 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max

60 V

Manufacturer Part Number

DXTN10060DFJBQ-7

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Risk Rank

1.58

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

Transistors

技术

Si

Reach合规守则

unknown

配置

Single

功率耗散

1.5

功率 - 最大

1.8 W

产品类别

BJTs - Bipolar Transistors

晶体管类型

NPN

最小直流增益（hFE）@ Ic, Vce

340 @ 200mA, 2V

最大集极截止电流

100nA

不同 Ib, Ic 时 Vce 饱和度（最大值）

320mV @ 200mA, 4A

电压 - 集射极击穿（最大值）

60 V

转换频率

300

频率转换

125MHz

集电极基极电压(VCBO)

100 V

连续集电极电流

100

产品类别

Bipolar Transistors - BJT