Diodes Incorporated DXTN58100CFDB-7

安装类型

表面贴装

包装/外壳

3-UDFN Exposed Pad

供应商器件包装

U-DFN2020-3 (Type B)

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current-Collector (Ic) (Max)

4 A

Transistor Polarity

NPN

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

690 mW

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

180 at 500 mA, 2 V

Collector-Emitter Saturation Voltage

190 mV

Unit Weight

0.000353 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

150 MHz

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Maximum DC Collector Current

6 A

DC Current Gain hFE Max

350 at 500 mA, 2 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

100 V

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

Transistors

技术

Si

配置

Single

功率耗散

1.5

功率 - 最大

690 mW

产品类别

BJTs - Bipolar Transistors

晶体管类型

NPN

最小直流增益（hFE）@ Ic, Vce

180 @ 500mA, 2V

最大集极截止电流

100nA

不同 Ib, Ic 时 Vce 饱和度（最大值）

260mV @ 400mA, 4A

电压 - 集射极击穿（最大值）

100 V

转换频率

300

频率转换

150MHz

集电极基极电压(VCBO)

100 V

连续集电极电流

100

产品类别

Bipolar Transistors - BJT