Diodes Incorporated DXTN5840CFDB-7
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DXTN5840CFDB-7
671-DXTN5840CFDB-7
晶体管 - 双极性晶体管(BJT)- 单个
3-UDFN Exposed Pad
大陆
立即发货

SS LOW SAT TRANSISTOR U-DFN2020-
1最小包装量--
DXTN5840CFDB-7详情
Diodes Incorporated DXTN5840CFDB-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
13 Weeks
安装类型
表面贴装
包装/外壳
3-UDFN Exposed Pad
表面安装
YES
供应商器件包装
U-DFN2020-3 (Type B)
终端数量
3
晶体管元件材料
SILICON
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
5 A
Transistor Polarity
PNP
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
690 mW
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
200 at 1 A, 2 V
Collector-Emitter Saturation Voltage
150 mV
Unit Weight
0.000353 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
150 MHz
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Maximum DC Collector Current
7 A
Collector- Emitter Voltage VCEO Max
40 V
RoHS
Details
DC Current Gain hFE Max
290 at 1 A, 2 V
Package Description
SMALL OUTLINE, S-PDSO-N3
Package Style
小概要
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-55 °C
Operating Temperature-Max
150 °C
Rohs Code
有
Transition Frequency-Nom (fT)
150 MHz
Manufacturer Part Number
DXTN5840CFDB-7
Turn-on Time-Max (ton)
190 ns
Package Shape
SQUARE
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
DIODES INC
Turn-off Time-Max (toff)
1150 ns
Risk Rank
1.78
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
JESD-609代码
e4
端子表面处理
Nickel/Palladium/Gold (Ni/Pd/Au)
附加功能
HIGH RELIABILITY
子类别
Transistors
技术
Si
端子位置
DUAL
终端形式
无铅
Reach合规守则
compliant
参考标准
AEC-Q101
JESD-30代码
S-PDSO-N3
配置
Single
功率耗散
1.5
箱体转运
COLLECTOR
功率 - 最大
690 mW
晶体管应用
SWITCHING
极性/通道类型
NPN
产品类别
BJTs - Bipolar Transistors
晶体管类型
NPN
最小直流增益(hFE)@ Ic, Vce
200 @ 1A, 2V
最大集极截止电流
100nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
350mV @ 30mA, 3A
电压 - 集射极击穿(最大值)
40 V
转换频率
320
频率转换
150MHz
集电极基极电压(VCBO)
40 V
最大耗散功率(Abs)
1.25 W
集电极电流-最大值(IC)
5 A
最小直流增益(hFE)
180
连续集电极电流
100
集电极-发射器电压-最大值
40 V
VCEsat-最大值
0.275 V
集电极-基极电容-最大值
70 pF
产品类别
Bipolar Transistors - BJT
DXTN5840CFDB-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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