Diodes Incorporated DXTN69060CE-7
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DXTN69060CE-7
671-DXTN69060CE-7
晶体管 - 双极性晶体管(BJT)- 单个
SOT223-4
大陆
立即发货

Bipolar Transistors - BJT Pwr Low Sat Transistor SOT223 T&R 1K
1最小包装量--
DXTN69060CE-7详情
Diodes Incorporated DXTN69060CE-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT223-4
RoHS
符合RoHS标准
Mounting Styles
SMD/SMT
Transistor Polarity
NPN
Maximum DC Collector Current
5.5 A
Collector- Emitter Voltage VCEO Max
60 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
180 mV
Pd - Power Dissipation
2 W
Gain Bandwidth Product fT
200 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
80
DC Current Gain hFE Max
475
Factory Pack Quantity
1000
系列
DXTN69060CE
包装
Reel
配置
Single
集电极基极电压(VCBO)
80 V
连续集电极电流
5.5 A
DXTN69060CE-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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